Macroscopic evidence of nanoscale resistive switching in La<inf>2/3</inf>Sr<inf>1/3</inf>MnO<inf>3</inf>micro-fabricated bridges

© 2014 IOP Publishing Ltd. In this work we report on a combined macro, micro and nanoscale investigation where electronic transport properties through La2/3Sr1/3MnO3(LSMO) microfabricated bridges, in which nano-sized resistive states are induced by using a conducting scanning probe microscope (C-SPM), are analyzed. The strategy intentionally avoids the standard capacitor-like geometry, thus allowing the study of the electronic transport properties of the locally modified region, and approaches the integration of functional oxides in low dimensional devices while providing macroscopic evidence of nanoscale resistive switching (RS). The metallic and ferromagnetic LSMO is locally modified from its low resistance state (LRS) to a high resistance state (HRS) when a bias voltage is applied on its surface through the conducting tip, which acts as a mobile electrode. Starting from a metallic oxide the electroforming process is not required, thus avoiding one of the major drawbacks for the implementation of memory devices based on RS phenomena. The application of a bias voltage generates an electric field that promotes charge depletion, leading to a strong increase of the resistance, i.e. to the HRS. This effect is not only confined to the outermost surface layer, its spatial extension and final HRS condition can be modulated by the magnitude and duration of the potential applied, opening the door to the implementation of multilevel devices. In addition, the half-metallic character, i.e. total spin polarization, of LSMO might allow the implementation of memory elements and active spintronic devices in the very same material. The stability of the HRS and LRS as a function of temperature, magnetic field and compliance current is also analyzed, allowing the characterization of the nature of the switching process and the active material.